Showing posts with label STMicroelectronics. Show all posts
Showing posts with label STMicroelectronics. Show all posts

Tuesday, June 23, 2009

Samsung and Numonyx Drive PCM Adoption

Samsung and Numonyx today announced that they will jointly develop common specifications for phase change memory (PCM). Common specifications are necessary to drive the adoption of PCM, particularly since OEMs do not want to be beholden to one supplier. The development of common specifications is analogous to what Intel and ST did in NOR flash starting with the 90nm NOR flash generation and resulted in Intel and ST being dual sourced at major OEMs.

The bit alterability of PCM make it attractive in simplifying firmware and reducing system overhead, however, adoption of PCM will likely be limited until costs approach that of flash memories. With a 45nm 1Gb PCM chip scheduled for production for the end of 2009, Numonyx will be closing the gap with NOR flash, however it'll take much longer for a new memory technology to break out of its niche status, if at all. Just take a look at where FRAM and MRAM are today.

This colloboration is the right step to facilitate the development of the infrastructure supporting PCM. Samsung's backing is a validation of the technology and also provides OEMs the confidence to commit themselves to this emerging memory technology.

Monday, March 31, 2008

Numonyx Born #1

Intel and STMicroelectronics today announced the official launch of their JV, Numonyx. Numonyx combines the NOR flash assets of Intel and NAND and NOR assets of ST under one roof.

Numonyx starts out its first day as the number one NOR flash vendor, overtaking Spansion. Now, like Spansion and other NOR flash vendors, it must find a way to make money. It’s not going to be easy with the economy in bad shape and NOR flash pricing affected by falling NAND flash prices. The new company, does however, have a few things going for it.

1. By merging two similar businesses, there’s a lot of low hanging fruit and
opportunities to cut costs.

2. Numonyx will have dedicated facilities for production unlike in the past when it had to compete for resources with chipset or logic products.

3. Numonyx is 1.5 years and 2 years ahead of Spansion and Samsung on the technology roadmap.

4. At Intel and ST, flash memory was a side business. At Numonyx, flash memory is a core business.

This last point is what makes Numonyx a formidable competitor. It must succeed just to survive.

Monday, February 11, 2008

Flash Memory Replacement Achieves Major Milestones

At last week’s ISSCC, Intel and STMicroelectronics presented a paper demonstrating the first multi-level cell phase change memory [PCM]. The chip is a 256Mb device based on 90-nanometer process technology. PCM has been touted as a potential replacement for flash memory due to its fast reads and writes and superior endurance.

On the same day of the ISSCC paper, Intel and ST began shipments of prototype samples to customers of a 128Mb chip also based on the same 90nm technology. Careful reading of the ISSCC paper implies that the 256Mb MLC device and the 128Mb device are one and the same chip. The MLC technology is still in the research phase and it appears the prototype samples have the MLC functionality disabled.

The 128Mb product is mainly a learning vehicle to improve the technology for volume manufacturing, to learn about which applications may be suitable for PCM and to develop the firmware to support the devices. Due to the high initial cost of PCM, the 90nm devices will have limited production volume, however, this is expected to change as PCM migrates to more advanced process technologies and MLC technology is deployed.

PCM’s time will come as flash memory encounters scaling limitations within the next five years.

Monday, December 3, 2007

Samsung and Toshiba Form United Front against ONFI

On December 3, 2007, Samsung Electronics and Toshiba Corp. announced that they have licensed to one another, the product specifications and the rights to produce and market Samsung’s OneNAND and Flex-OneNAND, and Toshiba’s LBA-NAND and mobile LBA-NAND memory chips.

Both companies plan to develop compatible products based on the respective specifications to be released next year.

Our Take

After sitting on the sidelines and watching while ONFI amassed a membership roster of 57 companies since its establishment in May 2006, Samsung and Toshiba have finally acted and joined hands to develop products based on common specifications. Both companies are no strangers to collaboration, having shared common NAND specifications for years.
LBA-NAND, Toshiba’s solution for managing the increasing ECC requirements and bad block management of NAND flash by combining NAND flash memory with a controller in a single package, is expected to become mainstream for devices at 40nm and below. ONFI responded with their own version: BA-NAND. With Samsung’s backing, LBA-NAND is expected to be a very viable alternative to BA-NAND.


As for OneNAND, Samsung has been pressured by mobile phone manufacturers to license OneNAND to ensure a second source for the devices. Last year, Samsung licensed OneNAND to ST Microelectronics and now Toshiba. Toshiba and SanDisk (former M-Systems) jointly developed mDOC (mobile Disk-on-Chip) which is similar to OneNAND but based on MLC NAND. Both products integrate a NAND core, SRAM, error correcting engines, and logic circuits in a single chip with a NOR interface. In fact, OneNAND was developed by Samsung based on IP licensed from M-Systems with the licensing agreement subsequently terminated in 2005. mDOC has never been a significant product line for Toshiba and resource-wise, it does not make sense for Toshiba to invest in two similar but incompatible, competing solutions. It appears opting to support OneNAND at the expense of mDOC is the price Toshiba is willing to pay to garner Samsung’s backing for LBA-NAND.